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Infrastructure - "All"

OPAL/TSUANMI/MILLENNIA Laser system from Spectra Physcis

With an electron beam a pattern is written in a photoresist layer. After exposure to this beam it is possible to selectively remove either exposed or non-exposed regions of the resist with chemical...

NUV optical lithography system with 365 nm exposure wavelength. Patern resolution of sub micron in contact mode.

By tightly focusing the light of an ultra-short pulsed laser, the intensity within the very focus is sufficiently high to expose the photoresist by two-photon absorption. This process causes a chem...

Suss Delta 80 Spin coater

Magnetron sputter coater

Oxford Plasmalab 80+ Ion beam etching