more_info_label_03
  • Raith e-LiNE lithography system
  • search to
  • search method
    • filter submit
    • infrastructure filter
    • expertise filter
    • publication filter
    • show advanced
    • target group
    • search sort
    • no keyword
    • Please provide at least 1 keyword for search.
Raith e-LiNE lithography system
Description

With an electron beam a pattern is written in a photoresist layer. After exposure to this beam it is possible to selectively remove either exposed or non-exposed regions of the resist with chemicals thus creating nanotechnology structures.

Application

Electron-beam lithography

References

Location

E0.08

Specifications

  • Sample size max. 100 x 100 mm
  • Sample loadlock
  • Laser-interferometer controlled stage with 2 nm position resolutionRange x=100 by y=100mm z=30 mm
  • Coarse fast movement with DC-motors within 0.2 micron
  • Fine movement with piezos 8 micron travel nm resolution
  • Beam energy 100 v – 30 kV
  • Beam current 5 pA – 20 nAApertures 7.5, 10, 20, 30, 60, 120 mµ
  • Beam current drift <0.5% in 8 hours
  • Beam position stability < 300 nm/h
  • Beam size 2 nm at 20 kV
  • Beam current density > 7500 A/cm2
  • Electrostatic beam blanker 200 kHz 30 ns rise time
  • 10 MHz Digital pattern generator
  • 16 bit write field, size 0.5 mu to 2 mm
  • 0.1 nm addressing increment
  • Dwell time100 nsec – 500 msec minimum increment 1 ns
  • Mark recognition gives overlay accuracy of 40 nm
  • Write field stitching 40 nm
  • GDSII format viewer and editor
  • Import AutoCAD DXF, ASCII or CIF format converted to GDSII
  • Minimum feature size 20 nm in high resolution positive resist