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Description

Raith e-Line lithography system

Sem, fib, Ebid

Laser

Application

e-beam lithography

References

\\cleanroomsrv\data\__documentation\e_Line (only from AMOLF accesible)

Location

E0.08

Specifications

Raith e-Line lithography system

Electron beam lithography

With an electron beam a pattern is written in a sensitive resist layer. After exposure to this beam it is possible to selectively remove either exposed or non-exposed regions of the resist with chemicals thus creating nanotechnology structures.

Sample size max. 100 x 100mm

Sample loadlock

Stage;

Laser-interferometer controlled with 2nm position resolution

Range x=100 by y=100mm z=30mm,

Coarse fast movement with DC-motors within 0.2 micron

fine movement with piezos 8 micron travel nm resolution

Beam energy 100v – 30kV

Beam current 5pA – 20nA